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SAMSUNG 980 PRO 1TB M.2 2280 PCI-Express Gen 4.0 x4 — NVMe 1.3c Samsung V-NAND 3-bit MLC Internal Solid State Drive (SSD) - MZ-V8P1T0BW

SAMSUNG 980 PRO 1TB M.2 2280 PCI-Express Gen 4.0 x4 — NVMe 1.3c Samsung V-NAND 3-bit MLC Internal Solid State Drive (SSD) - MZ-V8P1T0BW
SAMSUNG 980 PRO 1TB M.2 2280 PCI-Express Gen 4.0 x4 — NVMe 1.3c Samsung V-NAND 3-bit MLC Internal Solid State Drive (SSD) - MZ-V8P1T0BW
SAMSUNG 980 PRO 1TB M.2 2280 PCI-Express Gen 4.0 x4 — NVMe 1.3c Samsung V-NAND 3-bit MLC Internal Solid State Drive (SSD) - MZ-V8P1T0BW
SAMSUNG 980 PRO 1TB M.2 2280 PCI-Express Gen 4.0 x4 — NVMe 1.3c Samsung V-NAND 3-bit MLC Internal Solid State Drive (SSD) - MZ-V8P1T0BW
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SAMSUNG 980 PRO 1TB M.2 2280 PCI-Express Gen 4.0 x4 — NVMe 1.3c Samsung V-NAND 3-bit MLC Internal Solid State Drive (SSD) - MZ-V8P1T0BW
SAMSUNG 980 PRO 1TB M.2 2280 PCI-Express Gen 4.0 x4 — NVMe 1.3c Samsung V-NAND 3-bit MLC Internal Solid State Drive (SSD) - MZ-V8P1T0BW
SAMSUNG 980 PRO 1TB M.2 2280 PCI-Express Gen 4.0 x4 — NVMe 1.3c Samsung V-NAND 3-bit MLC Internal Solid State Drive (SSD) - MZ-V8P1T0BW
SAMSUNG 980 PRO 1TB M.2 2280 PCI-Express Gen 4.0 x4 — NVMe 1.3c Samsung V-NAND 3-bit MLC Internal Solid State Drive (SSD) - MZ-V8P1T0BW
SAMSUNG 980 PRO 1TB M.2 2280 PCI-Express Gen 4.0 x4 — NVMe 1.3c Samsung V-NAND 3-bit MLC Internal Solid State Drive (SSD) - MZ-V8P1T0BW
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  • Model: MZ-V8P1T0BW
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Tags: SAMSUNG 980 PRO , 1TB SSD , M.2 2280 , PCIe Gen 4.0 x4 , NVMe 1.3c , V-NAND 3-bit MLC , internal SSD , high-performance SSD , MZ-V8P1T0BW , fast storage , gaming SSD , reliable SSD , solid state drive , high-speed SSD

General Features

Application

  • Use Cases: Client PCs

Capacity

  • Total Capacity: 1,000 GB (1 GB = 1 Billion bytes by IDEMA)
    • Note: Actual usable capacity may be less due to formatting, partitioning, operating system, applications, or other factors.

Form Factor

  • Type: M.2 (2280)

Interface

  • Type: PCIe Gen 4.0 x4, NVMe 1.3c

Dimensions

  • Size: 80.15 x 22.15 x 2.38 mm

Weight

  • Max Weight: 9.0 g

Storage Memory

  • Technology: Samsung V-NAND 3-bit MLC

Controller

  • Type: Samsung Elpis Controller

Cache Memory

  • Size: 1 GB Low Power DDR4 SDRAM

Special Features

  • TRIM Support: Supported
  • S.M.A.R.T Support: Supported
  • Garbage Collection: Auto Garbage Collection Algorithm
  • Encryption Support: AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
  • WWN Support: Not supported
  • Device Sleep Mode Support: Yes

Performance

  • Sequential Read: Up to 7,000 MB/s (Performance may vary based on system hardware & configuration)
  • Sequential Write: Up to 5,000 MB/s (Performance may vary based on system hardware & configuration)
  • Random Read (4 KB, QD32): Up to 1,000,000 IOPS (Performance may vary based on system hardware & configuration)
  • Random Write (4 KB, QD32): Up to 1,000,000 IOPS (Performance may vary based on system hardware & configuration)
  • Random Read (4 KB, QD1): Up to 22,000 IOPS (Performance may vary based on system hardware & configuration)
  • Random Write (4 KB, QD1): Up to 60,000 IOPS (Performance may vary based on system hardware & configuration)

Environment

  • Average Power Consumption (system level):
    • Average: 6.2 W
    • Maximum: 8.9 W (Burst mode)
    • Note: Actual power consumption may vary depending on system hardware & configuration.
  • Power Consumption (Idle): Max. 35 mW
    • Note: Actual power consumption may vary depending on system hardware & configuration.
  • Allowable Voltage: 3.3 V ± 5 %

Reliability

  • MTBF: 1.5 Million Hours
  • Operating Temperature: 0 - 70 ℃
  • Shock Resistance: 1,500 G & 0.5 ms (Half sine)

Accessories

  • Installation Kit: Not Available

Software

  • Management Software: Magician Software for SSD management